20-GB S MONOLITHIC P-I-N/HBT PHOTORECEIVER MODULE FOR 1.55-MU-M APPLICATIONS/

A photoreceiver, composed of a p-i-n photodetector monolithically inte grated with an InP-InGaAs heterojunction bipolar transistor (HBT)-base d transimpedance amplifier, has been fabricated from metal-organic mol ecular beam epitaxy (MOMBE) material. The fiber-pigtailed module has m easured sensitivities of -20.4 dBm and -17.0 dBm for data rates of 10 Gb/s and 20 Gb/s, respectively, at a bit-error-rate of 1 x 10(-9). Hig h-speed operation has been achieved with modest (3 mu m) device dimens ions. These results are the best ever reported for an OEIC photoreceiv er at these speeds.