ZERO FIELD-ODMR AND EMISSION MICROWAVE DOUBLE-RESONANCE ON OPTICALLY-EXCITED SILOXENE/

Citation
H. Pioch et al., ZERO FIELD-ODMR AND EMISSION MICROWAVE DOUBLE-RESONANCE ON OPTICALLY-EXCITED SILOXENE/, Solid state communications, 96(9), 1995, pp. 665-670
Citations number
15
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
00381098
Volume
96
Issue
9
Year of publication
1995
Pages
665 - 670
Database
ISI
SICI code
0038-1098(1995)96:9<665:ZFAEMD>2.0.ZU;2-H
Abstract
The first zero field optically detected magnetic resonance experiments on siloxene as-prepared (Sx(ap)) and annealed (Sx(an)) revealed a sin gle inhomogeneously broadened signal reaching from 30 up to 100O MHz. It is attributed to a distribution of triplet states from electron hol e pairs (bound excitons?), whose spins are separated between 14 and 4. 5 Angstrom. Using emission/microwave double-resonance techniques, a we ak emission could be resolved in the long wavelength part of the broad photoluminescence (PL) spectrum of both materials. The maxima of thes e microwave affected emissions are shifted by 1100 cm(-1) for Sx(ap) a nd 1300 cm(-1) for Sx(an) against the PL maxima, respectively.