ON THE STRUCTURE AND STABILITY OF SI(111)-(7X7) FRAGMENTS CREATED DURING GROWTH OF AG SI(111)-(ROOT-3X-ROOT-3)/

Authors
MCCOMB DW WOLKOW RA MOFFATT DJ HACKETT PA
Citation
Dw. Mccomb et al., ON THE STRUCTURE AND STABILITY OF SI(111)-(7X7) FRAGMENTS CREATED DURING GROWTH OF AG SI(111)-(ROOT-3X-ROOT-3)/, Surface science, 340(1-2), 1995, pp. 955-959
Citations number
9
Categorie Soggetti
Chemistry Physical
Journal title
Surface science → ACNP
ISSN journal
00396028
Volume
340
Issue
1-2
Year of publication
1995
Pages
955 - 959
Database
ISI
SICI code
0039-6028(1995)340:1-2<955:OTSASO>2.0.ZU;2-U
Abstract
During reactive growth of Ag on Si(111) we observe remnants of the Si( 111)-(7 X 7) surface which do not react to form the (root 3 X root 3) structure. In one case the fragment that remains is smaller than a hal f unit cell of (7 X 7) and appears to have undergone a (7 X 7) to (5 X 5) phase transformation. The height variation of the adatoms in this fragment correlates with observations at the (7 X 7)/(root 3 X root 3) interface and provides insight into the local structure and electroni c properties of this interface. A mechanism for the formation of such silicon fragments is proposed.