TEMPERATURE-PROGRAMMED EVOLUTION OF LOW-ENERGY, RARE-GAS IONS IMPLANTED IN SI(100) (VOL 330, PG L633, 1995)

Citation
Mr. Tesauro et al., TEMPERATURE-PROGRAMMED EVOLUTION OF LOW-ENERGY, RARE-GAS IONS IMPLANTED IN SI(100) (VOL 330, PG L633, 1995), Surface science, 340(1-2), 1995, pp. 997-997
Citations number
1
Categorie Soggetti
Chemistry Physical
Journal title
ISSN journal
00396028
Volume
340
Issue
1-2
Year of publication
1995
Pages
997 - 997
Database
ISI
SICI code
0039-6028(1995)340:1-2<997:TEOLRI>2.0.ZU;2-9