We present a new approach to consider non-spherical atomic charge dens
ities for the computation of intensities in low energy electron diffra
ction (LEED). This might be important for covalently bonded atoms for
example in adsorbed molecules, semiconductors or compound materials. I
n a first step the non-spherical charge distribution of a surface atom
is approximated by Hartree-Fock calculations applied to a small atomi
c cluster surrounding the atom under consideration. Then, starting wit
h a LEED reference calculation for spherical scatterers as usual, the
deviation from the spherical charge distribution is taken into account
by means of the corresponding change of the atomic scattering matrix
which becomes non-diagonal. Eventually, this is made to enter the pert
urbation scheme tenser LEED. This procedure allows easy access to tria
l structures with realistic atomic scattering. We applied the method t
o an example of practical importance, i.e. to the unreconstructed Si(1
00) surface. A rough estimation neglecting multiple scattering between
the non-spherical and spherical part of the atomic potential proves,
however, that the influence of non-spherical scattering on intensities
in a typical energy range (20-150 eV) is practically negligible.