STUDY OF THE MECHANISM OF GAAS(001) MOLECULAR-BEAM EPITAXY

Authors
MAO HB LU W SHEN XC
Citation
Hb. Mao et al., STUDY OF THE MECHANISM OF GAAS(001) MOLECULAR-BEAM EPITAXY, Acta physica Sinica, 4(10), 1995, pp. 757-765
Citations number
NO
Categorie Soggetti
Physics
Journal title
Acta physica Sinica → ACNP
ISSN journal
10003290
Volume
4
Issue
10
Year of publication
1995
Pages
757 - 765
Database
ISI
SICI code
1000-3290(1995)4:10<757:SOTMOG>2.0.ZU;2-1
Abstract
In this paper the nucleation and growth processes of GaAs(001) molecul ar-beam epitaxy were studied by Monte Carlo simulation. The density of islands and the density of isolated Ga adatoms were obtained for diff erent growth temperatures, and the island size distribution at low cov erage, as well as the correlation function between atoms and its relat ion with the temperature were studied in detail.