A Monte Carlo simulation study has been conducted to examine the effic
iency of bimolecular charge recombination as a function of the binding
energy Delta E(exc) of the exciton state formed upon collapse of an e
lectron-hole pair. It is found that for Delta E(exc) > 0.2 eV the yiel
d is constant and in accord with Langevin's recombination formalism bu
t decreases sharply for lower binding energy. Analytic considerations
are presented relating the rate of bimolecular charge recombination to
the electron arid hole current densities in single layer devices as w
ell as in bilayer devices featuring interfacial charge accumulation. T
he conditions are examined under which the yield is independent of the
driving current.