OPTIMIZATION OF BURIED IMPLANTED LAYER IN DYNAMIC RANDOM-ACCESS MEMORIES BY SOFT ERROR MAPPING AND ION-BEAM-INDUCED CURRENT

Authors
KISHIMOTO T SAYAMA H TAKAI M OHNO Y SONODA K NISHIMURA T KINOMURA A HORINO Y FUJII K
Citation
T. Kishimoto et al., OPTIMIZATION OF BURIED IMPLANTED LAYER IN DYNAMIC RANDOM-ACCESS MEMORIES BY SOFT ERROR MAPPING AND ION-BEAM-INDUCED CURRENT, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 104(1-4), 1995, pp. 515-518
Citations number
4
Categorie Soggetti
Physics, Nuclear","Nuclear Sciences & Tecnology","Instument & Instrumentation
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
104
Issue
1-4
Year of publication
1995
Pages
515 - 518
Database
ISI
SICI code
0168-583X(1995)104:1-4<515:OOBILI>2.0.ZU;2-G
Abstract
Soft error testing using scanning nuclear microprobes, i.e., soft erro r mapping combined with ion beam-induced current (IBIC) measurements, can reveal device immune against soft errors, and, hence, optimal desi gn and process parameters can be determined from the data obtained usi ng nuclear microprobes. Well structures or buried barrier layers to su ppress charge carriers, generated by incident energetic particles in D RAMs, have been fabricated by high-energy ion implantation and the sup pression efficiency by the well structure was clarified using probe io n-induced current measurement