EVALUATION OF ULTRATRACE METALLIC IMPURITIES IN THIN COPPER LAYERS, BARRIER METALS AND SILICON-WAFERS FOR COPPER METALLIZATION TECHNOLOGY

Authors
TAKENAKA M TACHIBE T KOZUKA S HAYASHI M MATSUNAGA H
Citation
M. Takenaka et al., EVALUATION OF ULTRATRACE METALLIC IMPURITIES IN THIN COPPER LAYERS, BARRIER METALS AND SILICON-WAFERS FOR COPPER METALLIZATION TECHNOLOGY, JPN J A P 2, 35(12B), 1996, pp. 1628-1630
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
35
Issue
12B
Year of publication
1996
Pages
1628 - 1630
Database
ISI
SICI code
Abstract
An analytical method for the determination of ultratrace concentration s of metals in several semiconductor-related related materials for cop per metallization technology such as thin Cu layers, barrier metals an d silicon wafers has been developed. Using this method, the concentrat ion of Cu impurities in Si wafers resulting from diffusion of Cu from Cu metallization layers through barrier layers of TiN, TiSiN, or WSiN was found to be less than 10(12) atoms/cm(3).