SRTIO3 CAPACITOR WITH RELATIVE DIELECTRIC-CONSTANT OF 200 ON GAAS SUBSTRATE AT MICROWAVE FREQUENCY

Authors
NISHIMURA TB IWATA N TAKEMURA K KUZUHARA M MIYASAKA Y
Citation
Tb. Nishimura et al., SRTIO3 CAPACITOR WITH RELATIVE DIELECTRIC-CONSTANT OF 200 ON GAAS SUBSTRATE AT MICROWAVE FREQUENCY, JPN J A P 2, 35(12B), 1996, pp. 1683-1684
Citations number
4
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
35
Issue
12B
Year of publication
1996
Pages
1683 - 1684
Database
ISI
SICI code
Abstract
An RF-sputtered SrTiO3 (STO) capacitor was fabricated on a GaAs substr ate. Microwave characterization exhibited a relative dielectric consta nt (E(r)) of 200 up to 20 GHz. This high E(r) was x obtained when the base electrode and the STO film were sputter-deposited in succession. A novel Pt/Ti/Pt/Ti base metal exhibited high tolerance against ion-mi lling, resulting in lower Ohmic resistance compared to the conventiona l base metal, Pt/Ti.