SURFACTANT EFFECTS OF ATOMIC-HYDROGEN ON LOW-TEMPERATURE GROWTH OF INAS ON INP

We have investigated the initial stage of InAs grown on InP at low tem perature with atomic hydrogen (H). At 350 degrees C, the critical laye r thickness (CLT), above which lattice relaxation begins to start, inc reases from 30 to 46 Angstrom by atomic H supply during growth. When t he growth temperature is lowered to 250 degrees C, the CLT increases t o above 100 Angstrom with atomic H (with-H), while only small change i n the CLT appears without atomic H condition (without-H). The lattice relaxation process with-H is delayed significantly and the oscillation of the specular beam intensity of reflection high-energy electron dif fraction persists for longer time than without-H. These results indica te that atomic H has beneficial effects on the considerable increase i n the CLT and the formation of flat surface.