We have developed a method for synthesizing SiOx films with visible li
ght emission, applying a laser ablation technique. The films were form
ed by depositing laser-ablated silicon particles in oxygen gas diluted
with helium gas. Soft X-ray absorption spectroscopy revealed that the
composition of the film is controlled by the total pressure of the ga
s. Films with particular composition exhibit intense red photoluminesc
ence with a peak below 1.5 eV after annealing in argon gas at 1000 deg
rees C. In addition to this, most of the films exhibit 2.2-eV photolum
inescence after annealing at 500 degrees C. On the basis of these resu
lts, the origin of the photoluminescence is discussed.