ELECTROPLATING OF POLY(TETRAFLUOROETHYLENE) USING PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED TITANIUM NITRIDE AS AN INTERLAYER

A low-temperature process for titanium nitride (TiN) deposition by mea ns of an electron cyclotron resonance (ECR) plasma enhanced chemical v apor deposition process was applied to poly(tetrafluoroethylene) (PTFE ). Tetrakis(dimethylamido)titanium introduced into the downstream regi on of a nitrogen ECR plasma was used as a precursor for TIN deposition at 100 degrees C. The thin TiN films (thickness 15-30 nm) act as inte rlayers to activate the electroless deposition of copper followed by a n electroplating process. Prior to the deposition of the interlayer, t he samples were treated on a biased susceptor with argon ions to enhan ce the adhesion of the TiN interlayer. This metallization procedure av oids the use of toxic and pollutive etching agents and yields adherent copper layers on PTFE. Films were characterized by four-point probe r esistivity measurements, atomic force microscopy, and secondary ion ma ss spectrometry. (C) 1995 American Institute of Physics.