SIZE DEPENDENCE OF BAND-GAPS IN SILICON NANOSTRUCTURES

Citation
B. Delley et Ef. Steigmeier, SIZE DEPENDENCE OF BAND-GAPS IN SILICON NANOSTRUCTURES, Applied physics letters, 67(16), 1995, pp. 2370-2372
Citations number
34
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
67
Issue
16
Year of publication
1995
Pages
2370 - 2372
Database
ISI
SICI code
0003-6951(1995)67:16<2370:SDOBIS>2.0.ZU;2-T
Abstract
The size dependence of the energy band gap for hydrogen saturated sili con clusters, wires and slabs are calculated using all electron densit y functional theory. The hydrogen saturation is considered as a model for a wider band gap insulator enclosing the silicon structures. With this perspective in mind, an effective mass model with finite barriers for both valence and conduction band is found to semiquantatively acc ount for the numerical findings. (C) 1995 American Institute of Physic s.