PARAMAGNETIC-RESONANCE IN GAN-BASED LIGHT-EMITTING-DIODES

Significant advances in GaN-based materials and devices have prompted intense interest in the group III nitrides. In this letter, we report electroluminescence-detected magnetic resonance (ELDMR) and electrical ly detected magnetic resonance (EDMR) results on InGaN/AlGaN double he terostructures which have an intense blue emission. The dominant featu re detected by either technique is a broad resonance (Delta B similar to 21 mT) at g approximate to 2.00. Our ELDMR measurements show that t his is associated with the blue emission and we ascribe this resonance signal to a deep Zn-related acceptor. A second resonance, resolved in EDMR, is tentatively identified as a deep donor trap. Based on our re sults we propose a model for the blue emission from these diodes. (C) 1995 American Institute of Physics.