DIAMOND DEPOSITION FROM FLUORINATED PRECURSORS USING MICROWAVE-PLASMACHEMICAL-VAPOR-DEPOSITION

Diamond thin films were grown using fluorinated precursors by microwav e plasma-assisted chemical vapor deposition. Using CH4/H-2, CH3F/H-2, and CF4/H-2 gas mixtures, films were, grown at surface temperatures in the range 600-900 degrees C at constant microwave power, carbon mole fraction, and pressure. Growth activation energies for the CH4/H-2, CH 3F/H-2, and CF4/H-2 mixtures were 12.6+/-1.8, 13.7+/-1.2, and 12.4+/-1 .1 kcal/mole, respectively. Argon ion etching in conjunction with x-ra y photoelectron spectroscopy indicated negligible fluorine incorporati on into the films. These results are consistent with the hypothesis th at diamond is grown from the same intermediates, namely methyl radical s and atomic hydrogen, for all of these mixtures. (C) 1995 American In stitute of Physics.