SIO2 C-SI BILAYER ELECTRON-BEAM RESIST PROCESS FOR NANO-FABRICATION/

We have developed an SiO2/c-Si bilayer electron beam resist process in order to overcome the problems encountered in our previously develope d SiO2/poly-Si resist system. The process parameters which include the electron beam exposure conditions, thicknesses of resist layers, etch ing of SiO2 and c-Si by using buffeted HF solution and NMD-3 solution, respectively, are optimized. The developed SiO2/c-Si EB resist system is used to produce a suspended mask structure with an opening of 12 n m width for the double angle deposition of Ti for our proposed ultrasm all metal-insulator-metal tunnel junction fabrication process. We have also demonstrated the successful lift-off of inorganic resist by remo ving underlying c-Si layer of 40 x 40 mu m(2) area using NMD-3 solutio n at 70 degrees C, leaving an array of isolated Ti-TiOx-Ti dots, each having few hundred nm(2) area, on the substrate.