DIRECTED VAPOR-DEPOSITION OF AMORPHOUS AND POLYCRYSTALLINE ELECTRONICMATERIALS - NONHYDROGENATED A-SI

A novel directed vapor deposition (DVD) process for creating amorphous and polycrystalline electronic materials is reported. Initial experim ental results for DVD of nonhydrogenated a-Si indicate that growth rat es at least between 0.02 and 1.0 mu m/min can be achieved. In this pro cess, evaporated silicon is efficiently entrained in a previously form ed low pressure supersonic He jet. The silicon is evaporated using a h igh energy, high voltage, electron beam. The collimated jet of He entr ained with silicon is used to deposit thin films of a-Si at room tempe rature on glass substrates. Initial TEM microstructure analysis and op tical absorption analysis is presented.