H2O2-HF-C4O6H6 (TARTARIC ACID)H2O ETCHING SYSTEM FOR CHEMICAL POLISHING OF GASB

We present the results of a study of H2O2:HF:C4O6H6 (tartaric acid):H2 O solution for chemical polishing of GaSb wafers. The influence of etc hing solution composition on surface morphology was studied. The solut ions investigated varied in H2O2 (2.0-3.0 mol) and HF (0.0-5.0 mol) co ncentrations, but contained a constant concentration of tartaric acid (0.7 mol). it was found that the etchant has excellent polishing prope rties for GaSb wafers when the HF concentration was less than 1.5 mol. For HF concentration larger than 1.5, the etchant solution produced r ough surfaces. The dependencies of the etching rate on solution compos ition, temperature, and etching time were studied.