ENHANCEMENT OF THE FLUORIDE VACANCY CONDUCTION IN PBF2-SIO2 AND PBF2-AL2O(3) COMPOSITES

Citation
K. Hariharan et J. Maier, ENHANCEMENT OF THE FLUORIDE VACANCY CONDUCTION IN PBF2-SIO2 AND PBF2-AL2O(3) COMPOSITES, Journal of the Electrochemical Society, 142(10), 1995, pp. 3469-3473
Citations number
40
Categorie Soggetti
Electrochemistry
ISSN journal
00134651
Volume
142
Issue
10
Year of publication
1995
Pages
3469 - 3473
Database
ISI
SICI code
0013-4651(1995)142:10<3469:EOTFVC>2.0.ZU;2-Z
Abstract
A careful analysis of the impedance spectra of PbF2:SiO2 and PbF2:Al2O 3 composites reveals that the increased conductivity of the composites is due to enhanced fluorine ion vacancy concentration. The combinatio n of homogeneous and heterogeneous doping is consistent with the above finding. These results are in reasonable agreement with the ''model o f heterogeneous doping.'' Space charge mechanisms as well as various o ther processes that may contribute to the enhanced conductivity are di scussed.