OPTICALLY INDUCED ABSORPTION IN POROUS SILICON AND ITS APPLICATION TOLOGIC GATES

Authors
MATSUMOTO T DAIMON M MIMURA H KANEMITSU Y KOSHIDA N
Citation
T. Matsumoto et al., OPTICALLY INDUCED ABSORPTION IN POROUS SILICON AND ITS APPLICATION TOLOGIC GATES, Journal of the Electrochemical Society, 142(10), 1995, pp. 3528-3533
Citations number
43
Categorie Soggetti
Electrochemistry
Journal title
Journal of the Electrochemical Society → ACNP
ISSN journal
00134651
Volume
142
Issue
10
Year of publication
1995
Pages
3528 - 3533
Database
ISI
SICI code
0013-4651(1995)142:10<3528:OIAIPS>2.0.ZU;2-N
Abstract
We have observed a large optically induced absorption in porous silico n. The figure of merit for third order optical nonlinearity is of the order of 10(-3) (esu . cm), a value as large as that of a photorefract ive material such as BaTiO3. By exploiting this phenomenon, we have ma de simple demonstrations of optical hysteresis, parallel image process ing and all-optical logic gates. These results point to the possibilit y of expanding the applications of Si semiconductors from electronics to all-optical technologies.