EM, XPS AND LEED STUDY OF DEPOSITION OF AG ON HYDROGENATED SI SUBSTRATE PREPARED BY WET CHEMICAL TREATMENTS

The deposition of Ag on a hydrogenated Si(lll) substrate, prepared by wet chemical treatment, was carried out at room temperature (RT), 250 degrees C and above 350 degrees C. The samples were examined in situ b y LEED, XPS and then by SEM and TEM. Our results show that flat Ag cry stallite domains are growing on the H/Si(111) surface at all three sub strate temperatures. The (h/w) ratio of the islands increases but the density decreases with increasing substrate temperature which is attri buted to the differences between hydrogenated and clean Si(111) surfac e. The so-called A-type and B-type domains resulting from analyses of TOF ICISS are attributed to twinning in the deposited layer.