K. Aguir et al., ELECTRICAL-PROPERTIES OF A-GAAS C-GAAS(N) AND MIS-TYPE A-GAASN/C-GAAS(N) HETEROSTRUCTURES/, Journal de physique. III, 5(10), 1995, pp. 1573-1585
Citations number
54
Categorie Soggetti
Material Science","Phsycs, Fluid & Plasmas","Physics, Applied
Heterojunctions were fabricated by deposit of amorphous GaAs and GaAsN
on c-GaAs. I(V) and C(V) measurements were performed to determine ele
ctrical properties of these structures. The a-GaAs/c-GaAs(n) heterojun
ctions present a p-n junction like behaviour. The characteristics of t
he a-GaAsN/c-GaAs(n) heterojunctions present a MIS Like structure beha
viour with some imperfections. A fixed positive charge was detected an
d a density of interface states of about 10(11) eV(-1)cm(-2) was evalu
ated.