ELECTRICAL-PROPERTIES OF A-GAAS C-GAAS(N) AND MIS-TYPE A-GAASN/C-GAAS(N) HETEROSTRUCTURES/

Authors
AGUIR K FENNOUH A CARCHANO H LOLLMAN D
Citation
K. Aguir et al., ELECTRICAL-PROPERTIES OF A-GAAS C-GAAS(N) AND MIS-TYPE A-GAASN/C-GAAS(N) HETEROSTRUCTURES/, Journal de physique. III, 5(10), 1995, pp. 1573-1585
Citations number
54
Categorie Soggetti
Material Science","Phsycs, Fluid & Plasmas","Physics, Applied
Journal title
Journal de physique. III → ACNP
ISSN journal
11554320
Volume
5
Issue
10
Year of publication
1995
Pages
1573 - 1585
Database
ISI
SICI code
1155-4320(1995)5:10<1573:EOACAM>2.0.ZU;2-W
Abstract
Heterojunctions were fabricated by deposit of amorphous GaAs and GaAsN on c-GaAs. I(V) and C(V) measurements were performed to determine ele ctrical properties of these structures. The a-GaAs/c-GaAs(n) heterojun ctions present a p-n junction like behaviour. The characteristics of t he a-GaAsN/c-GaAs(n) heterojunctions present a MIS Like structure beha viour with some imperfections. A fixed positive charge was detected an d a density of interface states of about 10(11) eV(-1)cm(-2) was evalu ated.