GaAs grown on vicinal Si(111) substrates by molecular-beam epitaxy sho
wed a phenomenon peculiar to a (111) interface due to bond-matching du
ring the initial growth stage (layer thickness (t), t less than or equ
al to 200 nm), accompanying the growth of GaAs islands with perfect-cr
ystalline quality. The best full-width at half-maximum of (111) GaAs X
-ray diffraction in GaAs layers on vicinal Si(111) tilted by 6 degrees
toward the [0 (1) over bar 1] direction was 100 arc.s. at a layer thi
ckness of 200 nm.