DIAMOND EPITAXIAL-GROWTH BY GAS-SOURCE MOLECULAR-BEAM EPITAXY WITH PURE METHANE

Diamond epitaxial films with a thickness of 200-350 Angstrom have been successfully grown on C(100) surfaces by gas-source molecular beam ep itaxy (GSMBE) with methane without addition of hydrogen or oxygen. The activation energy was measured by a selective growth method using Ta- patterned substrates to be 15 kcal/mol. This value is close to the act ivation energy of H-2 desorption on C(100), suggesting that the diamon d epitaxial growth rate by this GSMBE is limited by hydrogen desorptio n.