PHOTOLUMINESCENCE OF RARE-EARTH-DOPED A-SI-H FILMS

This paper discusses the effect of rare-earth ions on the photolumines cence intensity of amorphous hydrated silicon. Rare-earth impurities s uppress the intrinsic luminescence by creating a nonradiative recombin ation center in the mobility gap. Dysprosium is an exception; when it is introduced in the film-deposition process at a concentration of 0.1 at. %, it increases the luminescence quantum efficiency and produces a radical reconstruction of the emission spectra. The temperature depe ndence of the photoluminescence intensity of undoped a-Si:H and of a-S i:H doped with rare-earth ions is presented. (C) 1995 American Institu te of Physics.