Ft. Vasko et Oe. Raichev, TUNNELING RELAXATION OF HOLES IN DOUBLE-QUANTUM WELLS WITH NONIDEAL HETEROBOUNDARIES, Semiconductors, 29(9), 1995, pp. 822-824
This paper presents a calculation of the tunneling relaxation rate of
holes in double quantum wells when the holes are scattered at heterobo
undary roughnesses. Because of mixing of the light-and heavy-hole stat
es (which are described analytically in the approximation of strongly
differing effective masses), the interwell tunneling mechanism changes
as the splitting energy of the tunnel-coupled levels increases. The d
ependence of the tunneling relaxation rate on the splitting energy is
compared with the experimental results. (C) 1995 American Institute of
Physics.