TUNNELING RELAXATION OF HOLES IN DOUBLE-QUANTUM WELLS WITH NONIDEAL HETEROBOUNDARIES

Citation
Ft. Vasko et Oe. Raichev, TUNNELING RELAXATION OF HOLES IN DOUBLE-QUANTUM WELLS WITH NONIDEAL HETEROBOUNDARIES, Semiconductors, 29(9), 1995, pp. 822-824
Citations number
7
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
10637826
Volume
29
Issue
9
Year of publication
1995
Pages
822 - 824
Database
ISI
SICI code
1063-7826(1995)29:9<822:TROHID>2.0.ZU;2-7
Abstract
This paper presents a calculation of the tunneling relaxation rate of holes in double quantum wells when the holes are scattered at heterobo undary roughnesses. Because of mixing of the light-and heavy-hole stat es (which are described analytically in the approximation of strongly differing effective masses), the interwell tunneling mechanism changes as the splitting energy of the tunnel-coupled levels increases. The d ependence of the tunneling relaxation rate on the splitting energy is compared with the experimental results. (C) 1995 American Institute of Physics.