Mv. Strikha et al., RADIATIVE RECOMBINATION TRANSITIONS BETWEEN STATES OF BOUND AND FREE-EXCITONS IN UNIAXIALLY STRAINED CADMIUM TELLURIDE, Semiconductors, 29(9), 1995, pp. 838-843
The way that emission lines from bound and free excitons in CdTe shift
, split, and change in intensity under uniaxial strain have been inves
tigated theoretically and experimentally. The nonlinear shift observed
in the energy positions of peaks due to receptor-bound excitons is ca
used by strong spin-spin interaction in the system of two heavy holes.
A nonmonotonic dependence and abrupt quenching of the intensity of em
ission from acceptor-bound excitons in the high-strain regime (pressur
es P>1 kbar) with a simultaneous buildup in the free-exciton emission
line has been observed. The theoretical model considers two basic mech
anisms for recombination-radiative and Auger recombination. The result
s which were obtained can be used to identify types of defects in CdTe
, and to determine local mechanical stresses in CdTe-based heterostruc
tures. (C) 1995 American Institute of Physics.