FABRICATION AND STUDY OF GH-SIC EPITAXIAL-DIFFUSED P-N-STRUCTURES

We show that boron diffusion into 6H-SiC epitaxial p-n-structures lead s to a significant increase in the bulk breakdown voltage of the latte r, as well as decreasing the probability of surface breakdown. We have observed that an optimal choice of the diffusion temperature exists w hich ensures a rather low ohmic resistance of the diode when it is swi tched into forward bias. We have investigated the breakdown voltages o f 6H-SiC epitaxial-diffused p-n structures over a wide temperature int erval. (C) 1995 American Institute of Physics.