SELF-ORGANIZATION OF STRAINED QUANTUM-SIZE INXGA1-XAS STRUCTURES GROWN ON MISORIENTED (100)SURFACES OF GAAS DURING SUBMONOLAYER MOLECULAR-BEAM EPITAXY

Authors
GURYANOV GM TSYRLIN GE PETROV VN SAMSONENKO YB GUBANOV VB POLYAKOV NK GOLUBOK AO TIPISEV SY MUSIKHINA EP
Citation
Gm. Guryanov et al., SELF-ORGANIZATION OF STRAINED QUANTUM-SIZE INXGA1-XAS STRUCTURES GROWN ON MISORIENTED (100)SURFACES OF GAAS DURING SUBMONOLAYER MOLECULAR-BEAM EPITAXY, Semiconductors, 29(9), 1995, pp. 854-857
Citations number
20
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
29
Issue
9
Year of publication
1995
Pages
854 - 857
Database
ISI
SICI code
1063-7826(1995)29:9<854:SOSQIS>2.0.ZU;2-4
Abstract
Using the method of scanning tunneling microscopy, we have investigate d the effect of misorientation of the (100) GaAs surface on the format ion of quantum-size InxGa1-xAs structures during submonolayer molecula r-beam epitaxy, An anisotropy in the distribution of these quantum-siz e formations at the vicinal surface in a direction different from the direction of misorientation of the substrate has been observed. These results indicate that it is possible to create new types of quantum-si ze formations (quantum wires and ordered arrays of quantum dots) direc tly during submonolayer molecular-beam epitaxial growth. (C) 1995 Amer ican Institute of Physics.