OXYGEN IN LUMINESCENCE OF ZNSE(TE)

Citation
Nk. Morozova et al., OXYGEN IN LUMINESCENCE OF ZNSE(TE), Semiconductors, 29(9), 1995, pp. 873-880
Citations number
32
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
10637826
Volume
29
Issue
9
Year of publication
1995
Pages
873 - 880
Database
ISI
SICI code
1063-7826(1995)29:9<873:OILOZ>2.0.ZU;2-8
Abstract
It was found that doping with tellurium affects the solubility of oxyg en in ZnSe[Te] single crystals grown from melts. This factor determine s the optical properties of the crystals. It was shown that, depending on the ratio [Te]/[O], different types of O-Te complexes-intrinsic po int defects-can form in the presence of an excess of zinc. The nature of the luminescence centers in ZnSe[Te] (O, Zn) (BE, 470-490, 550, 635 , 720, and 1300 nm bands) is discussed on the basis of the results of the investigation of the optical properties of the microstructure, tak ing into account the equilibrium of the intrinsic point defects. (C) 1 995 American Institute of Physics.