INAS GAAS QUANTUM DOTS OBTAINED BY SUBMONOLAYER MIGRATION-ENHANCED EPITAXY/

Authors
TSYRLIN GE GOLUBOK AO TIPISEV SY LEDENTSOV NN
Citation
Ge. Tsyrlin et al., INAS GAAS QUANTUM DOTS OBTAINED BY SUBMONOLAYER MIGRATION-ENHANCED EPITAXY/, Semiconductors, 29(9), 1995, pp. 884-886
Citations number
16
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
29
Issue
9
Year of publication
1995
Pages
884 - 886
Database
ISI
SICI code
1063-7826(1995)29:9<884:IGQDOB>2.0.ZU;2-4
Abstract
The method of submonolayer migration-enhanced epitaxy was proposed and implemented for the first time on the EP1203 molecular-beam epitaxy s etup. The method was used to obtain InAs quantum dots on the singular and vicinal (100) surfaces of GaAs. Our results show that the method o f submonolayer migration-enhanced epitaxy is promising for producing h ighly uniform arrays of quantum dots with low size dispersion. (C) 199 5 American Institute of Physics.