MEASUREMENT OF CARRIER-INDUCED CHANGES OF THE COMPLEX REFRACTIVE-INDEX IN INGAASP NEAR THE BAND-EDGE

Authors
HANAIZUMI O IZUMIKAWA M KAWAKAMI S
Citation
O. Hanaizumi et al., MEASUREMENT OF CARRIER-INDUCED CHANGES OF THE COMPLEX REFRACTIVE-INDEX IN INGAASP NEAR THE BAND-EDGE, Optics communications, 120(3-4), 1995, pp. 158-165
Citations number
11
Categorie Soggetti
Optics
Journal title
Optics communications → ACNP
ISSN journal
00304018
Volume
120
Issue
3-4
Year of publication
1995
Pages
158 - 165
Database
ISI
SICI code
0030-4018(1995)120:3-4<158:MOCCOT>2.0.ZU;2-U
Abstract
A new method has been developed to measure the complex refractive inde x changes of a thin film medium, using a probe light perpendicularly t ransversing the surface and a small interference-ellipsometry bridge. Carrier-induced changes of the refractive index and absorption have be en measured in InGaAsP near the band edge using this method. Experimen tal results are compared with calculations.