ELECTRONIC-STRUCTURE OF CHALCOGENIDE COMPOUNDS FROM THE SYSTEM TL2S-SB2S3 STUDIED BY XPS AND XES

Citation
A. Gheorghiu et al., ELECTRONIC-STRUCTURE OF CHALCOGENIDE COMPOUNDS FROM THE SYSTEM TL2S-SB2S3 STUDIED BY XPS AND XES, Journal of alloys and compounds, 228(2), 1995, pp. 143-147
Citations number
18
Categorie Soggetti
Chemistry Physical","Metallurgy & Metallurigical Engineering","Material Science
ISSN journal
09258388
Volume
228
Issue
2
Year of publication
1995
Pages
143 - 147
Database
ISI
SICI code
0925-8388(1995)228:2<143:EOCCFT>2.0.ZU;2-H
Abstract
X-ray photoelectron (XPS) and soft X-ray emission (XES) spectroscopies have been used as complementary methods to study the electronic struc ture of TI2S, Sb2S3, TISb2 and TISb3S5. XPS provides the binding energ y (BE) of core levels as well as the total valence band (VB) distribut ions; XES probes the S 3p VB density of states. S 2p core level study shows that the charge transfer to sulphur atoms is noticeably higher i n TI2S than in Sb2S3 and ternary compounds. From a comparison of XPS a nd XES results, we conclude that S 3p states are located near the top of the band in all cases; the results are discussed with reference to density of state calculations.