Single crystals of epsilon-GaSe doped with Cr3+ from 0.01 to 0.1 mole
were grown by the vertical Bridgman technique. In this study, the misc
ibility gap of Cr3+ in epsilon-GaSe phase was investigated from measur
ements of XRD, Raman spectra, and the temperature dependence of the ba
nd gap. We found that the miscible limit of Cr3+ in epsilon-GaSe phase
is less than 0.05 mole and that the second phase, i.e., (CrSe), is fo
rmed at 0.05 mole of Cr3+ in epsilon-GaSe.