TEMPERATURE-DEPENDENT OPTICAL ANISOTROPY OF THE VICINAL SI(001)(2X1) SURFACE

Reflectance anisotropy spectroscopy (RAS) has become a powerful surfac e characterization tool in semiconductor physics. To clarify the origi ns of RAS spectra model systems are currently being studied. Kerr we s tudy the temperature dependence of the RAS spectrum of the Si(001) sur face. The intensity of the positive RAS peak at 4.3 eV is found to pro vide a direct measure of the (2 x 1):(1 x 2) domain ratio, while the b road negative trough centered on about 3 eV shows variation of fine sh ape as well as intensity with temperature. The origins of these featur es are discussed.