DISLOCATIONS IN SILICON STRUCTURES OBTAIN ED THROUGH THE DIRECT SURFACE JOINING WITH RELIEF

Authors
ARGUNOVA TS GREKHOV IV GUTKIN MY KOSTINA LS BELYAKOVA EN KUDRYAVTSEVA TV KIM ED PARK DM
Citation
Ts. Argunova et al., DISLOCATIONS IN SILICON STRUCTURES OBTAIN ED THROUGH THE DIRECT SURFACE JOINING WITH RELIEF, Fizika tverdogo tela, 38(11), 1996, pp. 3361-3364
Citations number
12
Categorie Soggetti
Physics, Condensed Matter
Journal title
Fizika tverdogo tela → ACNP
ISSN journal
03673294
Volume
38
Issue
11
Year of publication
1996
Pages
3361 - 3364
Database
ISI
SICI code
0367-3294(1996)38:11<3361:DISSOE>2.0.ZU;2-3