SPIN-RESONANCE IN IN0.53GA0.47AS UNDER HYDROSTATIC-PRESSURE

Authors
CHARLEBOIS S BEERENS J MINER CJ PUETZ N
Citation
S. Charlebois et al., SPIN-RESONANCE IN IN0.53GA0.47AS UNDER HYDROSTATIC-PRESSURE, Physical review. B, Condensed matter, 54(19), 1996, pp. 13456-13459
Citations number
11
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
54
Issue
19
Year of publication
1996
Pages
13456 - 13459
Database
ISI
SICI code
0163-1829(1996)54:19<13456:SIIUH>2.0.ZU;2-7
Abstract
Using a far-infrared photoconductivity technique, we made direct spin- resonance measurements on bulk In0.53Ga0.47As under hydrostatic pressu re up to 10 kbar. Results are analyzed through an eight-band k . p for malism to extract the effective electronic g factor g(c) and the Kane interband matrix element E(p) as function of pressure. These are foun d to be given by the following best-fit relations: E(p) = 24.13 + 0.06 9P (eV)and g(c) = -4.089 + 0.102P - 1.2 x 10(-3)P(2), where P is expr essed in kbar.