EFFECTS OF SB DOPING ON SI(001) SURFACE ROUGHENING AND EPITAXIAL THICKNESS AT LOW GROWTH TEMPERATURES (100-300-DEGREES-C)

The Sb incorporation probability in homoepitaxial Si(001) films grown by ultrahigh Vacuum ion-beam sputter deposition at temperatures T-s be tween 100 and 300 degrees C was found, using quantitative secondary io n mass spectrometry, to be unity with no evidence of surface segregati on. Surface roughnesses and epitaxial thicknesses t(e) were measured b y atomic force microscopy and cross-sectional transmission electron mi croscopy, respectively, for both undoped and Sb-doped Si layers. Sb do ping was found to dramatically increase the rate of surface roughening and to decrease t(e) by a factor of greater than or similar to 2 at g rowth temperatures between 250 and 300 degrees C while having no measu rable effect at lower temperatures. (C) 1995 American Institute of Phy sics.