INGAASP GAAS ELASTICALLY STRAINED QUATERNARY SOLID-SOLUTIONS WITH HIGH CRITICAL THICKNESSES GROWN BY LIQUID-PHASE EPITAXY/

Authors
BOLKHOVITYANOV YB JAROSHEVICH AS NOMEROTSKY NV REVENKO MA TRUKHANOV EM
Citation
Yb. Bolkhovityanov et al., INGAASP GAAS ELASTICALLY STRAINED QUATERNARY SOLID-SOLUTIONS WITH HIGH CRITICAL THICKNESSES GROWN BY LIQUID-PHASE EPITAXY/, Applied physics letters, 67(17), 1995, pp. 2486-2487
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
67
Issue
17
Year of publication
1995
Pages
2486 - 2487
Database
ISI
SICI code
0003-6951(1995)67:17<2486:IGESQS>2.0.ZU;2-5
Abstract
Highly elastically strained films of InGaAsP solid solutions in 1.4-1. 8 eV interval of band gaps were grown on GaAs(111)B substrates by liqu id phase epitaxy. Elastic strains close to 1% are achieved. The determ ined critical thicknesses exceed the predictions of the energy equilib rium theory by Matthews and Blakeslee by as much as an order of magnit ude. (C) 1995 American Institute of Physics.