SB-SURFACTANT-MEDIATED GROWTH OF SI SI1-YCY SUPERLATTICES BY MOLECULAR-BEAM EPITAXY/

Si/Si0.97C0.03 superlattices were grown on Si(001) substrates by. mole cular beam epitaxy (MBE) to study the use of Sb as a surfactant during Si1-yCy growth. In situ reflection high energy electron diffraction ( RHEED) shows that while carbon easily disrupts the two-dimensional gro wth of homoepitaxial Si, such disruption is suppressed for layers grow n on Sb-terminated Si(001) surfaces. Cross-sectional transmission elec tron microscopy (TEM) reveals that for samples grown without the use o f Sb, the Si/Si0.97C0.03 interfaces (Si0.97C0.03 on Si) were much more abrupt than Si0.97C0.03/Si interfaces. In the case of Sb-mediated gro wth, differences in abruptness between the two types of interfaces wer e not readily observable. (C) 1995 American Institute of Physics.