QUANTUM DEVICE SIMULATION WITH A GENERALIZED TUNNELING FORMULA

We present device simulations based on a generalized tunneling theory. The theory is compatible with standard coherent tunneling approaches and significantly increases the variety of devices that can be simulat ed. Quasi-bound and continuum states in the leads are treated on the s ame footing. Quantum charge self-consistency is included in the leads and the central device region. We compare the simulated I-V characteri stics with the experimental I-V characteristics for two complex quantu m device structures and find good agreement. (C) 1995 American Institu te of Physics.