We accurately measured the complex refractive index and dielectric fun
ctions from 0.2 to 5 eV of high-quality beta-FeSi2 epitaxial films, wi
th thicknesses ranging from 100 Angstrom to 8000 Angstrom, grown on Si
(001) and Si(lll) using two different techniques. Reflectance, transmi
ttance and spectroscopic ellipsometry were used and the spectra were a
nalyzed within a multilayer model, by checking the Kramers-Kronig cons
istency of the derived optical functions. These functions, compared wi
th previous results for polycrystalline samples, showed a very good ag
reement with those obtained for bulk samples and a significant differe
nce to films. The nature (direct or indirect) of the lowest optical ga
p and the effects of the film thickness and the substrate orientation
on the optical response were also investigated.