IMPROVEMENT OF INP CRYSTALLINE PERFECTION BY HE-IMPLANTATION AND SUBSEQUENT ANNEALING()

Authors
TIGINYANU IM TERLETSKY AI URSAKI VV
Citation
Im. Tiginyanu et al., IMPROVEMENT OF INP CRYSTALLINE PERFECTION BY HE-IMPLANTATION AND SUBSEQUENT ANNEALING(), Solid state communications, 96(10), 1995, pp. 789-792
Citations number
17
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
96
Issue
10
Year of publication
1995
Pages
789 - 792
Database
ISI
SICI code
0038-1098(1995)96:10<789:IOICPB>2.0.ZU;2-V
Abstract
The influence has been studied of 100-keV He+-ion implantation and sub sequent thermal annealing on Raman scattering spectra of LEC-grown InP single crystals with (100)- and (111)-crystallographic orientations o f the surface. Improvement of InP crystalline perfection was observed after He+-implantation at the dose 1x10(15) cm(-2) followed by sample annealing at 600-700 degrees C. Implant-induced removal of thermally s table defect clusters related with the growth process is supposed to b e primarily responsible for the phenomenon involved.