Im. Tiginyanu et al., IMPROVEMENT OF INP CRYSTALLINE PERFECTION BY HE-IMPLANTATION AND SUBSEQUENT ANNEALING(), Solid state communications, 96(10), 1995, pp. 789-792
The influence has been studied of 100-keV He+-ion implantation and sub
sequent thermal annealing on Raman scattering spectra of LEC-grown InP
single crystals with (100)- and (111)-crystallographic orientations o
f the surface. Improvement of InP crystalline perfection was observed
after He+-implantation at the dose 1x10(15) cm(-2) followed by sample
annealing at 600-700 degrees C. Implant-induced removal of thermally s
table defect clusters related with the growth process is supposed to b
e primarily responsible for the phenomenon involved.