A. Fennouh et al., ELECTRICAL CHARACTERISTICS OF AMORPHOUS GAAS-N-CRYSTALLINE SI HETEROJUNCTIONS, Materials science & engineering. B, Solid-state materials for advanced technology, 34(1), 1995, pp. 27-31
Capacitance-voltage (C-V) characteristics and temperature dependence o
f current density-voltage (J-V) characteristics of as-grown amorphous
gallium arsenide (a-GaAs) thin film heterojunctions formed on n-type c
rystalline silicon (c-Si(n)) have been measured. It has been found tha
t the depletion layer of a-GaAs-c-Si(n) junction spreads in the c-Si s
ide. The forward current, for bias voltages less than 0.4 V, shows vol
tage and temperature dependence expressed as exp(-E(af)/kT) exp (AV),
where E(af) and A are constants independent of voltage and temperature
. This current may be ascribed to a multi-tunnelling capture-emission
phenomena. The reverse current is proportional to exp(-E(ar)/kT)(V)(1/
2), where E(ar) is a constant. This current is probably limited by a g
eneration process.