DYNAMIC ANNEALING OF DAMAGE IN AR-IMPLANTED GAAS CRYSTALS()

Rutherford-backscattering spectrometry, X-ray double-crystal diffracto metry, reflection electron diffraction and Raman spectroscopy were use d to study semi-insulating GaAs(100) crystals implanted with a high cu rrent density Ar+ ion beam. The crystal structure of the implanted lay ers is determined by the fluence and current density of the incident i on beam. Dynamic annealing of radiation defects takes place during imp lantation. This radiation defect annealing is of an ion-induced nature . Restoration of the implanted GaAs crystal structure is observed. The residual damage is localized in two regions at approximate depths of 60 and 110 nm. The results are discussed in terms of point defect inte ractions due to target heating during irradiation.