A NOVEL METHOD TO CHARACTERIZE PARASITIC CAPACITANCES IN MOSFETS

Authors
RICCO B VERSARI R ESSENI D
Citation
B. Ricco et al., A NOVEL METHOD TO CHARACTERIZE PARASITIC CAPACITANCES IN MOSFETS, IEEE electron device letters, 16(11), 1995, pp. 485-487
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
16
Issue
11
Year of publication
1995
Pages
485 - 487
Database
ISI
SICI code
0741-3106(1995)16:11<485:ANMTCP>2.0.ZU;2-G
Abstract
A new technique exploiting the body effect is presented to separate in trinsic from extrinsic capacitances in submicron MOSFET's. The method has been validated using 2-D numerical simulations and results obtaine d with transistors fabricated with 0.7 mu m CMOS technology are presen ted.