ON THE TRANSIENT OPERATION OF PARTIALLY DEPLETED SOI NMOSFETS

The transient operation of partially depleted (PD) Silicon-On-Insulato r (SOI) NMOSFET's is investigated, based on two-dimensional numerical simulations, The studied devices have a gate length of 0.2 mu m and a floating body, They are designed for a supply voltage of 2 V. In the e ase of gate transient, we show that the body voltage is more influence d by the capacitive coupling with the gate electrode than the impact i onization current, Further, we demonstrate, for the first time, that t he anomalous subthreshold slope, that exists in a de static transfer I -V curve, doesn't exist in fast transient mode because the minimum tim e constant for body charging by impact ionization current is on the or der of 3 ns in such devices.