SUPERIOR LOW-PRESSURE-OXIDIZED SI3N4 FILMS ON RAPID-THERMAL-NITRIDED POLY-SI FOR HIGH-DENSITY DRAMS

Authors
CHANG HC LIU HW SU HP HONG G
Citation
Hc. Chang et al., SUPERIOR LOW-PRESSURE-OXIDIZED SI3N4 FILMS ON RAPID-THERMAL-NITRIDED POLY-SI FOR HIGH-DENSITY DRAMS, IEEE electron device letters, 16(11), 1995, pp. 509-511
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
16
Issue
11
Year of publication
1995
Pages
509 - 511
Database
ISI
SICI code
0741-3106(1995)16:11<509:SLSFOR>2.0.ZU;2-4
Abstract
High-performance stacked storage capacitors with small effective-oxide -thickness (t(ox),(eff)) as thin as 37 Angstrom has been achieved usin g low-pressure-oxidized nitride films deposited on NH3-nitrided poly-S i electrodes. The capacitors exhibit excellent leakage property and ti me-dependent-dielectric-breakdown (TDDB) characteristics. Furthermore, this technique is promising for the 64- and 256-Mb dynamic-random-acc ess-memory (DRAM) applications because the process temperatures never exceed 850 degrees C.