HIGH-LINEARITY HIGH-CURRENT-DRIVABILITY GA0.51IN0.49P GAAS MISFET USING GA0.51IN0.49P AIRBRIDGE GATE STRUCTURE GROWN BY GSMBE/

A novel structure Ga0.51In0.49P/GaAs MISFET with an undoped Ga0.51In0. 49P layer serving as the airbridge between active region and gate pad was first designed and fabricated. Wide and flat characteristics of g( m) and f(max) versus drain current or gate voltage were achieved, The device also showed a very high maximum current density (610 mA/mm) and a very high gate-to-drain breakdown voltage (25 V). Parasitic capacit ances and leakage currents were minimized by the airbridge gate struct ure and thus high f(T) of 22 GHz and high f(max) of 40 GHz for 1 mu m gate length devices were attained, To our knowledge, both were the bes t reported values for 1 mu m gate GaAs channel FET's.